 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES * SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER * LOW CRSS: 0.02 pF (TYP) * HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz * LOW NF: 1.1 dB TYP AT 900 MHz * LG1 = 1.0 m, LG2 = 1.5 m, WG = 400 m * ION IMPLANTATION * AVAILABLE IN TAPE & REEL OR BULK * LOW PACKAGE HEIGHT: 1.0 mm MAX Power Gain, GPS (dB) 20 NE25118 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE GPS 10 VG2S = 1 V VG2S = 0.5 V VG2S = 2 V 10 ID = 10 mA f = 900 MHz 5 NF 0 0 0 5 10 DESCRIPTION The NE25118 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. This device is available in a 4 pin super mini-mold package, (SOT-343 type). Maximum package height of 1.0 mm makes the NE25118 an ideal device for PCMCIA card applications. Drain to Source Voltage, VDS (V) ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOL NF GPS BVDSX IDSS VG1S (OFF) VG2S (OFF) IG1SS IG2SS |YFS| CISS CRSS PARAMETERS AND CONDITIONS Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz Drain to Source Breakdown Voltage at VG1S = -4 V, VG2S = 0, ID = 10 A Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V Gate 1 to Source Cutoff Voltage at VDS = 5 V, VG2S = 0 V, ID = 100 A Gate 2 to Source Cutoff Voltage at VDS = 5 V, VG1S = 0 V, ID = 100 A Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0 Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0 Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1.0 kHz Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1 MHz Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1 MHz UNITS dB dB V mA V V A A mS pF pF 18 0.5 25 1.0 0.02 16 13 5 -3.5 -3.5 10 10 35 1.5 0.03 20 40 MIN NE25118 18 TYP 1.1 20 MAX 2.5 California Eastern Laboratories Noise Figure, NF (dB) NE25118 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VDS VG1S VG2S ID PT TCH TSTG PARAMETERS Drain to Source Voltage Gate 1 to Source Voltage Gate 2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 13 20 25 VDS = 5 V VG2S = 1 V f = 900 MHz POWER GAIN AND NOISE FIGURE vs. DRAIN CURRENT 10 -4.5 -4.5 IDSS 120 125 -55 to +125 15 GPS 5 10 5 NF 0 Note: 1. Operation in excess of anyone of these parameters may result in permanent damage. 0 0 5 10 Drain Current, ID (mA) TYPICAL PERFORMANCE CURVES (TA = 25 C) TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE 250 30 VDS = 5V DRAIN CURRENT vs. GATE 1 TO SOURCE VOLTAGE Total Power Dissipation, PT (mW) 200 FREE AIR Drain Current, ID (mA) VG2S = 1.0V 20 150 120 100 0.5 V 10 0V 50 -0.5 V 0 0 0 25 50 75 100 125 -2.0 -1.0 0 +1.0 Ambient Temperature, TA (C) FORWARD TRANSFER ADMITTANCE vs. GATE 1 TO SOURCE VOLTAGE Forward Transfer Admittance, |YFS| (mS) Forward Transfer Admittance, |YFS| (mS) 30 VDS = 5V f = 1kHz 30 Gate 1 to Source Voltage, VG1S (V) FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 5 V f = 1 kHz VG2S = 1.0 V 20 20 VG2S = 1.0 10 0.5 V -0.5 V 0 -2.0 -1.0 0 +1.0 0V 10 VG2S = 0.5 V 0 0 10 20 30 Gate 1 to Source Voltage, VG1S (V) Drain Current, ID (mA) Noise Figure, NF (dB) Power Gain, GP (dB) NE25118 TYPICAL PERFORMANCE CURVES (TA = 25C) INPUT CAPACITANCE vs. GATE 2 TO SOURCE VOLTAGE 2.0 VDS = 5 V f = 1kHz POWER GAIN AND NOISE FIGURE vs. GATE 2 TO SOURCE VOLTAGE 30 VDS = 5 V VG2S = 1 V ID = 10 mA f = 900 MHz 1 10 Input Capacitance, CISS (pF) 15 GPS VG2S = 1 V at ID = 10 mA 1 0 5 -15 NF -30 1.0 VG2S = 1 V at ID = 5 mA 1 -45 -1.0 0 +1.0 0 -2.0 -1.0 0 +1.0 +2.0 -3.0 Gate 2 to Source Voltage, VG2S (V) Note: 1. Initial bias conditions. VG1S set to obtain specified drain current. Gate 2 to Source Voltage, VG2S (V) Note: 1. Initial bias conditions. VG1S set to obtain specified drain current. NE25118 VDS = 5 V, VG2S = 1 V, ID = 10 mA FREQUENCY (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 MAG 0.999 1.000 0.998 0.974 1.005 0.942 0.968 0.920 0.952 0.898 0.915 0.879 S11 ANG -3.3 -7.2 -9.3 -13.4 -15.7 -19.1 -22.2 -25.2 -28.9 -29.4 -35.1 -35.2 MAG 2.359 2.389 2.313 2.233 2.420 2.300 2.332 2.229 2.447 2.303 2.348 2.367 S21 ANG 177.2 169.3 164.4 160.0 158.4 150.0 145.5 141.5 136.8 131.1 125.8 123.5 MAG 0.006 0.004 0.000 0.004 0.007 0.003 0.004 0.008 0.004 0.001 0.004 0.000 S12 ANG -122.3 123.0 -145.0 79.2 29.7 65.0 45.5 80.1 8.3 50.9 71.4 91.1 MAG 0.969 0.981 0.979 0.967 0.999 0.958 0.997 0.957 0.999 0.968 0.984 0.989 S22 ANG -1.3 -2.9 -3.3 5.6 -5.8 -7.7 -8.5 -9.4 -12.5 -11.1 -14.8 -13.0 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain, MSG = Maximum Stable Gain Noise Figure, NF (dB) Power Gain, GP (dB) NE25118 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 18 (SOT-343) 2.1 0.2 1.25 0.1 +0.10 0.3 -0.05 (LEADS 2, 3, 4) ORDERING INFORMATION PART NUMBER NE25118 NE25118-T1 AVAILABILITY Bulk up to 3K 3K/Reel 2.0 0.2 0.65 2 3 0.65 1.3 0.60 0.65 1 +0.10 0.4 -0.05 0.3 4 0.9 0.1 0 to 0.1 +0.10 0.15 -0.05 PIN CONNECTIONS 1. Source 2. Drain 3. Gate 2 4. Gate 1 Note: All dimensions are typical unless otherwise specified. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
Price & Availability of NE25118-T1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |